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ST9435GP Schematic ( PDF Datasheet ) - Stanson Technology

Teilenummer ST9435GP
Beschreibung P Channel Enhancement Mode MOSFET
Hersteller Stanson Technology
Logo Stanson Technology Logo 




Gesamt 6 Seiten
ST9435GP Datasheet, Funktion
ST9435GP
P Channel Enhancement Mode MOSFET
-15.0A
DESCRIPTION
ST9435GP is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These device is particularly suited for low voltage application, notebook computer
power management and other battery circuits where high-side switching.
PIN CONFIGURATION
FEATURE
-30V/-10A, RDS(ON) = 50mΩ
@VGS = -10V
-30V/-5A, RDS(ON) = 80mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-220 package design
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150)
Pulsed Drain Current
Symb
ol
VDSS
TA=25
TA=100
VGSS
ID
IDM
Typical
-30
±20
-15.0
-8.0
-60
Power Dissipation
TA=25
PD
62.5
Operation Junction Temperature
Storgae Temperature Range
TJ
TSTG
-55/150
-55/150
Thermal Resistance-Junction to Ambient
RθJA
62
Unit
V
V
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST9435GP 2010. V1






ST9435GP Datasheet, Funktion
TO-220-3L PACKAGE OUTLINE
ST9435GP
P Channel Enhancement Mode MOSFET
-15.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST9435GP 2010. V1

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