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PDF SSF4607D Data sheet ( Hoja de datos )
| Número de pieza | SSF4607D | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
RDS(on)
-30V
19mΩ(typ.)
ID -25A ①
TO-252
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF4607D
D
G
Marking and pin
Assignment
S
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-25 ①
-20 ①
-60
41
-30
± 20
-55 to + 150
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
3
25
50
Units
A
W
V
V
°C
Units
℃/W
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2012.03.22
www.silikron.com
Version : 1.0
page 1 of 9
1 page  
Typical electrical and thermal characteristics
SSF4607D
Figure 5. Maximum Drain Current Vs Case Temperature
Figure 6. Gate-Charge Characteristics
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
Case Temperature
©Silikron Semiconductor CO.,LTD.
2011.03.22
www.silikron.com
Version : 1.0
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSF4607D.PDF ] | |
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