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Número de pieza | SSF5508A | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF5508A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Main Product Characteristics:
SSF5508A
VDSS
RDS(on)
55V
4.5mohm(Typ)
ID 110A
Features and Benefits:
SSF5508A TOP View (TO263)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①
IDM Pulsed Drain Current②
ISM Pulsed Source Current.(Body Diode)
PD @TC = 25°C
Power Dissipation③
Linear derating factor
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS
IAR
Single Pulse Avalanche Energy @ L=0.3mH②
Avalanche Current @ L=0.3mH②
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
440
205
2
55
±20
35
634
65
-55 to + 175
Units
A
W
W/ Cْ
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Value
0.73
50
Unit
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
page 1of 6
1 page Typical electrical and thermal characteristics
SSF5508A
Figure 13: Transient Thermal Impedance Curve
Switch Waveforms
Notes:①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature. EAS
starting,ID=65A.
③The power dissipation PD is based on max. junction temperature, using
junction-to-case thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board
with 2oz. Copper, in a still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
page 5of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSF5508A.PDF ] |
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