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PDF SSF5508A Data sheet ( Hoja de datos )

Número de pieza SSF5508A
Descripción MOSFET ( Transistor )
Fabricantes Silikron Semiconductor 
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No Preview Available ! SSF5508A Hoja de datos, Descripción, Manual

Main Product Characteristics:
SSF5508A
VDSS
RDS(on)
55V
4.5mohmTyp
ID 110A
Features and Benefits:
SSF5508A TOP View (TO263)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175operating temperature
High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
ISM Pulsed Source Current.(Body Diode)
PD @TC = 25°C
Power Dissipation
Linear derating factor
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS
IAR
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
440
205
2
55
±20
35
634
65
-55 to + 175
Units
A
W
W/
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Value
0.73
50
Unit
/W
/W
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
page 1of 6

1 page




SSF5508A pdf
Typical electrical and thermal characteristics
SSF5508A
Figure 13: Transient Thermal Impedance Curve
Switch Waveforms
Notes:The maximum current rating is limited by bond-wires.
Repetitive rating; pulse width limited by max. junction temperature. EAS
starting,ID=65A.
The power dissipation PD is based on max. junction temperature, using
junction-to-case thermal resistance.
The value of RθJA is measured with the device mounted on 1in 2 FR-4 board
with 2oz. Copper, in a still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
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