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PDF SSF3055 Data sheet ( Hoja de datos )
| Número de pieza | SSF3055 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
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DESCRIPTION
The SSF3055 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a Battery protection or in
other Switching application.
GENERAL FEATURES
● VDS = 25V,ID = 12A
RDS(ON) < 120mΩ @ VGS=5V
RDS(ON) < 90mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
SSF3055
D
G
S
Schematic diagram
3S
2D
1G
Marking and pin Assignment
TO-252(DPAK) top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3055
SSF3055
To-252(DPAK)
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250µA
VDS=20V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250µA
VGS=5V, ID=12A
VGS=10V, ID=12A
Limit
25
±20
12
45
48
-55 To 150
75
Unit
V
V
A
A
W
℃
℃/W
Min Typ Max
25
25
±250
0.8 1.2
70
50
2.5
120
90
Unit
V
µA
nA
V
mΩ
mΩ
©Silikron Semiconductor CO.,LTD.
2008.7.29
Version : 1.0
page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SSF3055.PDF ] | |
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