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PDF SSS1004A7 Data sheet ( Hoja de datos )
| Número de pieza | SSS1004A7 | |
| Descripción | N-Channel enhancement mode power field effect transistors | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSS1004A7 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Main Product Characteristics
VDSS
RDS(on)
100V
3.0mΩ (typ.)
ID 180A ①
Features and Benefits
TO-263-7L
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSS1004A7
1, Gate
2~3,5~7 Source
4,8 Drain
Pin Assignment
Schematic diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
180 ①
130 ①
670
375
2.5
100
± 20
1045
83.5
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.04.18
www.silikron.com
Version : 1.2
page 1 of 7
1 page  
Mechanical Data：
TO-263-7L Package Outline Dimension (Unit: mm)
SSS1004A7
©Silikron Semiconductor CO.,LTD.
2014.04.18
www.silikron.com
Version : 1.2
page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSS1004A7.PDF ] | |
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