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Número de pieza | HV7361 | |
Descripción | 2.5A Two-or-Three-Level Ultrasound Pulsers | |
Fabricantes | Microchip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HV7361 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! HV7360/HV7361
High-Speed ±100V 2.5A Two-or-Three-Level Ultrasound Pulsers
Features
• HVCMOS® Technology for High Performance
• High Density Integration AC-coupled Pulser
• 0V to ±100V Output Voltage
• ±2.5A Source and Sink Minimum Pulse Current
• Up to 35 MHz Operating Frequency
• 2 ns Matched Delay Times
• 2.5V, 3.3V or 5V CMOS Logic Interface
• Built-in Two-terminal Low-noise Interface for
HV7361
• Low Power Consumption and No Floating Power
Supply Rails or Decoupling Capacitors
Applications
• Medical Ultrasound Imaging
• Piezoelectric Transducer Drivers
• Ultrasound Industrial NDT
• Pulse Waveform Generator
General Description
HV7360/HV7361 are high-voltage and high-speed
pulse generators with built-in fast return-to-zero
damping Field-Effect Transistors (FETs). An added
feature to HV7361 is an integrated two-terminal
low-noise T/R switch. These integrated circuits are
designed not only for portable medical ultrasound
image devices but also for NDT and test equipment
applications.
Both HV7360/HV7361 are composed of controller logic
interface circuits, level translators and AC-coupled
Metal Oxide Semiconductor Field-Effect Transistor
(MOSFET) gate drivers. They also have high-voltage
and high-current P-channel and N-channel MOSFETs
as output stages.
The peak output currents of each channel are
guaranteed to be over ±2.5A with up to ±100V of pulse
swing. The AC coupling topology for the gate drivers
not only saves two floating voltage supplies but also
makes the PCB layout easier.
Package Type
22-lead CABGA
(Top View)
2016 Microchip Technology Inc.
DS20005570A-page 1
1 page HV7360/HV7361
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V,
TA = 25°C unless otherwise specified.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Change in VGS(th) with Temperature
∆VGS(th) — — –4.5 mV/°C VGS = VDS, ID = 1 mA
Gate-to-source Shunt Resistor
RGS
10 — 50 kΩ IGS = 100 µA
Gate-to-source Zener Voltage
VZGS
13.2 —
25
V IGS = 2 mA
Zero Gate Voltage Drain Current
IDSS
——
10
μA
VDS = Maximum rating,
VGS = 0V
——
1
mA
VDS = 0.8 maximum rating,
VGS = 0V, TA = 125°C
ON-state Drain Current
ID(ON)
1.3 —
2.3 2.5
—
—
A
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 50V
Static Drain-to-sourceON-state
Resistance
RDS(ON)
—
—
—
—
6.5
6
Ω
VGS = 5V, ID = 150 mA
VGS = 10V, ID = 1A
Change in RDS(ON) with Temperature
∆RDS(ON) —
—
1 %/°C VGS = 10V, ID = 1A
AC PARAMETERS
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
DIODE PARAMETERS
GFS
CISS
COSS
CRSS
400 —
— 56
— 13
—2
— mmho VDS = 25V, ID = 500 mA
— VGS = 0V,
— pF VDS = 25V,
— f = 1 MHz
Diode Forward Voltage Drop
Reverse Recovery Time of Body Diode
VSBD
trrBD
— — 1.8
— 300 —
V VGS = 0V, ISD = 500 mA
ns
HV7631 T/R SWITCH CHARACTERISTICS
Parameters
Sym. Min. Typ. Max.
Breakdown Voltage from XDCR to Rx
Switch-on Resistance from XDCR to Rx
VA-B Trip Point to Turn Off
Switch Turn-off Voltage
Switch-off Current
Peak Switching Current
Turn-off Time
Turn-on Time
Switch-on Capacitance from A to B or
B to A
Switch-off Capacitance from A to B or
B to A
Small Signal Bandwidth
BVA-B
RSW
VTRIP
VOFF
IA-B(OFF)
IPEAK
TOFF
TON
CSW(ON)
CSW(OFF)
BW
±130
—
—
—
—
—
—
—
—
—
15
±1
±2
±200
±60
—
—
21
—
—
±2
—
±300
—
20
20
—
— 15 —
— 100 —
Units
Conditions
V IA-B = ±1 mA
Ω IA-B = ±5 mA
V
V IA-B = ±1 mA
µA VA-B = ±130V
mA
ns
ns
pF SW = On
pF VSW = 25V
MHz RLOAD = 50Ω
2016 Microchip Technology Inc.
DS20005570A-page 5
5 Page HV7360/HV7361
22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
NOTE 1
0.10 C
22X
D AB
0.08 C
(DATUM B)
(DATUM A)
2X
0.10 C
2X
0.10 C
TOP VIEW
eD
E
2X (0.25)
A1
A2
A
C
SEATING
PLANE
SIDE VIEW
eE
eE
e2
2X (0.50)
22X Øb
0.15 C A B
e 0.08 C
BOTTOM VIEW
Microchip Technology Drawing C04-414A Sheet 1 of 2
2016 Microchip Technology Inc.
DS20005570A-page 11
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet HV7361.PDF ] |
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