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PDF MTB150N10J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB150N10J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB150N10J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB150N10J3
BVDSS
ID @ VGS=10V, TA=25°C
100V
2.3A
ID @ VGS=10V, TC=25°C
7A
RDSON(TYP)
VGS=10V, ID=10A 163 mΩ
VGS=4.5V, ID=10A 178 mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB150N10J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB150N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB150N10J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
100
C oss
10
0
Crss
10
20 30 40
VDS, Drain-Source Voltage(V)
50
60
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1 VDS=15V
1.2
1 ID=1mA
0.8
0.6 ID=250μA
0.4
-65 -35 -5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
6 VDS=20V
0.1
Ta=25°C
Pulsed
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
10 Limited
1
100μs
1ms
10ms
100ms
1s
0.1 TC=25°C, Tj=150°C
VGS=10V, RθJC=5°C/W
Single Pulse
DC
0.01
0.1 1
10 100
VDS, Drain-Source Voltage(V)
1000
4
VDS=80V
2
ID=10A
0
02468
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
9
8
7
6
5
4
3
2
1 VGS=10V, RθJC=5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB150N10J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB150N10J3.PDF ] | |
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