|
|
PDF MTB110P08KN6 Data sheet ( Hoja de datos )
| Número de pieza | MTB110P08KN6 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB110P08KN6 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C123N6
Issued Date : 2015.11.24
Revised Date :
Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1A
-80V
-3.7A
-2.9A
104mΩ
141mΩ
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
• ESD protected gate
Equivalent Circuit
MTB110P08KN6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage
Gate-Source Voltage
Parameter
TC=25 °C, VGS=-10V
Continuous Drain Current
TC=70 °C, VGS=-10V
TA=25 °C, VGS=-10V (Note 1)
TA=70 °C, VGS=-10V (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
(Note 1)
TA=70 °C
(Note 1)
Operating Junction Temperature and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
-80
±20
-3.7
-3.0
-2.9
-2.3
-20
3.2
2.1
2.0
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
39
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
°C/W
MTB110P08KN6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C123N6
Issued Date : 2015.11.24
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
VDS=-10V
16
12
8
4
Single Pulse Power Rating, Junction to Case
300
250 TJ(MAX)=150°C
TA=25°C
200 RθJA=62.5°C/W
150
100
50
0
01
1
D=0.5
0.2
0.1 0.1
0.05
2345
-VGS, Gate-Source Voltage(V)
6
0
0.0001 0.001
Transient Thermal Response Curves
0.01 0.1
1
Pulse Width(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.02
0.01
0.01
10 100
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
Recommended Soldering Footprint
1.E+02
1.E+03
MTB110P08KN6
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB110P08KN6.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB110P08KN3 | P-Channel Enhancement Mode MOSFET | Cystech Electonics |
| MTB110P08KN6 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |