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Teilenummer | MTB110P08KJ3 |
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Beschreibung | P-Channel Enhancement Mode Power MOSFET | |
Hersteller | Cystech Electonics | |
Logo | ||
Gesamt 9 Seiten CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD Protected Gate
• Pb-free Lead Plating & Halogen-free Package
-80V
-11.3A
-3.2A
103mΩ(typ)
141mΩ(typ)
Equivalent Circuit
MTB110P08KJ3
Outline
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G DS
Ordering Information
Device
MTB110P08KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P08KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 6/9
Typical Characteristics (Cont.)
Forward Transfer Admittance vs Drain Current
100
3000
Single Pulse Power Rating, Junction to Case
2500
TJ(MAX)=150°C
10 TC=25°C
2000
RθJC=4°C/W
1 1500
VDS=-10V
1000
0.1 Pulsed
Ta=25°C
500
0.01
0.001
1
D=0.5
0.01 0.1
1
-ID, Drain Current(A)
10
0
0.0001 0.001
Transient Thermal Response Curves
0.01 0.1
1
Pulse Width(s)
10 100
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=4°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB110P08KJ3
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MTB110P08KJ3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MTB110P08KJ3 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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