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Número de pieza | MTB080P06N6 | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB080P06N6 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C069N6
Issued Date : 2016.03.24
Revised Date : 2016.04.15
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06N6
BVDSS
ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2.7A
-60V
-3.8A
-3.0A
79mΩ
107mΩ
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N6
G:Gate S:Source D:Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage
Gate-Source Voltage
Parameter
TC=25 °C, VGS=-10V
Continuous Drain Current
TC=70 °C, VGS=-10V
TA=25 °C, VGS=-10V (Note 1)
TA=70 °C, VGS=-10V (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
(Note 1)
TA=70 °C
(Note 1)
Operating Junction Temperature and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
-60
±20
-3.8
-3.0
-3.0
-2.4
-40
3.1
2.0
2.0
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
40
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
°C/W
MTB080P06N6
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C069N6
Issued Date : 2016.03.24
Revised Date : 2016.04.15
Page No. : 5/9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
10
Single Pulse Power Rating, Junction to Case
300
250 TJ(MAX)=150°C
TA=25°C
1 200 RθJA=62.5°C/W
150
0.1
VDS=-10V
100
Pulsed
Ta=25°C
50
0.01 0
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
1
10 100
-ID, Drain Current(A)
Pulse Width(s)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
Mounted on FR-4 board
with 1 in² pad area
20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
Power Derating Curve
20 40 60 80 100 120 140 160
TC, Case Temperature(℃)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB080P06N6
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB080P06N6.PDF ] |
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