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Teilenummer | MTB080P06N3 |
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Beschreibung | P-Channel Enhancement Mode Power MOSFET | |
Hersteller | Cystech Electonics | |
Logo | ||
Gesamt 9 Seiten CYStech Electronics Corp.
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
BVDSS
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1.7A
-60V
-2.5A
80mΩ
109mΩ
Features
•Advanced trench process technology
•High density cell design for ultra low on resistance
•Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N3
Outline
SOT-23
D
G:Gate
S:Source
D:Drain
GS
Ordering Information
Device
MTB080P06N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
10
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40
TJ(MAX)=150°C
TA=25°C
1 RθJA=100°C/W
30
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
20
10
0
0.001 0.01
0.1
1
10 100
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB080P06N3
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MTB080P06N3 Schematic.PDF ] |
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