|
|
PDF MTB080C10Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTB080C10Q8 | |
| Descripción | N- and P-channel enhancement mode power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB080C10Q8 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 1/12
N- and P-channel enhancement mode power MOSFET
MTB080C10Q8 BVDSS
ID@VGS=10V(-10V), TA=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
100V
2.9A
74mΩ
90mΩ
P-CH
-100V
-1.9A
174mΩ
195mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080C10Q8
Outline
SOP-8
D2
D2
D1
D1
G：Gate S：Source D：Drain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB080C10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080C10Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss 1.2
ID=1mA
1
100
C oss 0.8
10
0
10
Crss
5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
VDS=20V
6
4
VDS=80V
2
ID=2.9A
0
0 2 4 6 8 10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
3
10 RDSON
Limited
1
100μs
1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=78°C/W
Single Pulse
0.01
100ms
1s
DC
0.01 0.1 1 10 100 1000
VDS, Drain-Source Voltage(V)
2.5
2
1.5
1 TA=25°C
VGS=10V
0.5 RθJA=78°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB080C10Q8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB080C10Q8
CYStek Product Specification
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MTB080C10Q8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB080C10Q8 | N- and P-channel enhancement mode power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |