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MTB020N06KH8 Schematic ( PDF Datasheet ) - Cystech Electonics

Teilenummer MTB020N06KH8
Beschreibung N-Channel Enhancement Mode Power MOSFET
Hersteller Cystech Electonics
Logo Cystech Electonics Logo 




Gesamt 10 Seiten
MTB020N06KH8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB020N06KH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=8A
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD protected gate
Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=4.5V, ID=6A
RDS(ON)@VGS=4V, ID=4A
60V
42A
7.8A
12.2mΩ(typ)
15.6mΩ(typ)
17.6mΩ(typ)
Symbol
MTB020N06KH8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB020N06KH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N06KH8
CYStek Product Specification






MTB020N06KH8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
Page No. : 6/ 10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
10
0
f=1MHz
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
ID=8A
8 VDS=30V
6
4
VDS=48V
2
0
0 2 4 6 8 10 12 14 16 18 20
Qg, Total Gate Charge(nC)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
10ms
1ms
100μs
10
100ms
1 TC=25°C, Tj(max)=175°C
VGS=10V,RθJC=4.5°C/W
Single Pulse
DC
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10 Tj(max)=175°C,RθJC=2.1°C/W,
5 VGS=10V, Single Pulse
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
200
MTB020N06KH8
CYStek Product Specification

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