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PDF MTB020N03KN6 Data sheet ( Hoja de datos )
| Número de pieza | MTB020N03KN6 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB020N03KN6 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTB020N03KN6
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=7A
RDS(ON)@VGS=4.5V, ID=5A
30V
7A
8.8A
14.7 mΩ(typ)
18.9 mΩ(typ)
Description
The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
• ESD protected gate
Equivalent Circuit
MTB020N03KN6
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
MTB020N03KN6-0-T1-G
SOT-26
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB020N03KN6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
C oss
100
0.8
Crss
0.6
ID=250μA
10
0
10
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
1
VDS=15V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=24V
8
VDS=15V
6
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limited
10
100μs
1ms
10ms
1 100ms
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=62.5°C/W
Single Pulse
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
1s
DC
100
4
2 ID=7A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
9
8
7
6
5
4
3
2
1 TA=25°C, VGS=10V, RθJA=62.5°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB020N03KN6
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB020N03KN6.PDF ] | |
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