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PDF MTB020N03KL3 Data sheet ( Hoja de datos )
| Número de pieza | MTB020N03KL3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB020N03KL3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C143L3
Issued Date : 2016.01.22
Revised Date : 2016.02.22
Page No. : 1/9
30V N-channel Enhancement Mode MOSFET
MTB020N03KL3 BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=4A
RDSON@VGS=4.5V, ID=3A
30V
7.4A
21.4mΩ (typ)
25.7mΩ (typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• ESD protected gate
• Pb-free lead plating package
Symbol
MTB020N03KL3
G：Gate
S：Source
D：Drain
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTB020N03KL3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 :2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KL3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C143L3
Issued Date : 2016.01.22
Revised Date : 2016.02.22
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
C oss
100
0.8
Crss
0.6
ID=250μA
10
0
10
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
1
VDS=15V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=24V
8
VDS=15V
6
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limited
10 10μs
1
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=45°C/W
Single Pulse
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
DC
100
4
2 ID=4A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
9
8
7
6
5
4
3
2
1 TA=25°C, VGS=10V, RθJA=45°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB020N03KL3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB020N03KL3.PDF ] | |
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