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Teilenummer | MTB020N03KJ3 |
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Beschreibung | N-Channel Enhancement Mode Power MOSFET | |
Hersteller | Cystech Electonics | |
Logo | ||
Gesamt 9 Seiten CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB020N03KJ3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=10V, ID=20A
RDSON(TYP) VGS=4.5V, ID=10A
Features
VGS=4V, ID=10A
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free lead plating and halogen-free package
30V
30A
9A
13mΩ
18mΩ
21mΩ
Equivalent Circuit
MTB020N03KJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTB020N03KJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 6/9
Typical Characteristics(Cont.)
50
45
40
35
30
25
20
15
10
5
0
0
Typical Transfer Characteristics
VDS=10V
24 68
VGS, Gate-Source Voltage(V)
10
Single Pulse Power Rating, Junction to Case
3000
2700
2400
2100
1800
1500
1200
900
600
300
0
0.0001 0.001
TJ(MAX)=150°C
TC=25°C
RθJC=2.5°C/W
0.01 0.1
1
Pulse Width(s)
10
100
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Transient Thermal Response Curves
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB020N03KJ3
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MTB020N03KJ3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MTB020N03KJ3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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