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PDF MTB020A03KV8 Data sheet ( Hoja de datos )
| Número de pieza | MTB020A03KV8 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB020A03KV8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.06.13
Revised Date :
Page No. : 1/9
Dual N-Channel Enhancement Mode MOSFET
MTB020A03KV8 BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON@VGS=10V typ.
RDSON@VGS=4.5V typ.
30V
6.6A
12A
15.2 mΩ
20.1 mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB020A03KV8
Outline
D2
D2
D1
D1
DFN3×3
D1
D1
D2
D2
G：Gate S：Source D：Drain
Pin 1
G2
S2
G1
S1
S1
G1
S2
G2
Ordering Information
Device
MTB020A03KV8-0-T6-G
Package
Shipping
DFN3×3
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020A03KV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.06.13
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.) :
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
Crss
0.6
ID=250μA
10
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
10
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
1
0.1 VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON)
Limite
10
100μs
1ms
1 10ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=84°C/W,Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
8
VDS=15V
6
VDS=24V
4
2
ID=10A
0
0 4 8 12 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
8
7
6
5
4
3
2 TA=25°C, VGS=10V
1 RθJA=84°C/W
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTB020A03KV8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB020A03KV8.PDF ] | |
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