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Teilenummer | 2N6660 |
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Beschreibung | N-Channel Enhancement-Mode Vertical DMOS FET | |
Hersteller | Microchip | |
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Gesamt 10 Seiten 2N6660
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low CISS and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain
Applications
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6660 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
GATE
SOURCE
DRAIN
TO-39
Case: Drain
See Table 2-1 for pin information
2016 Microchip Technology Inc.
DS20005509A-page 1
2N6660
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005509A-page 6
2016 Microchip Technology Inc.
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ 2N6660 Schematic.PDF ] |
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