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6N60F Schematic ( PDF Datasheet ) - nELL

Teilenummer 6N60F
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller nELL
Logo nELL Logo 




Gesamt 10 Seiten
6N60F Datasheet, Funktion
SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(6A, 600Volts)
DESCRIPTION
The Nell 6N60 is a three-terminal silicon
device with current conduction capability
of 6A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 1.5Ω@VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 10pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(6N60F)
D
D
G
S
TO-252 (D-PAK)
(6N60G)
GDS
TO-220AB
(6N60A)
GDS
TO-220F
(6N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
6
600
1.5 @ VGS = 10V
25
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10






6N60F Datasheet, Funktion
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Fig.1 On-state characteristices
101
100
VGS
Top: 15V
10V
8V
7V
6.5V
6V
5.5V
5V
Bottorm: 4.5V
15V
5V
10-1
10-2
10-1
Note:
1. 250µs Pulse Test
2. TC = 25°C
100 101
Drain-to-Source voltage, VDS (V)
Fig.3 On-Resistance variation vs drain
current and gate voltage
6
5
4
3 VGS = 10V
2 VGS = 20V
1 Note:
1. TC = 25°C
0
0 2 4 6 8 10 12 14
Gate threshold voltage, VGS (TH)
Fig.5 Capacitance characteristics
1000
800
600
400
200
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgd Crss = Cgd
Ciss
Coss
Crss
Note:
1. VGS = 0V
2. f = 1MHz
0
10-1
100
101
Drain-Source voltage, VDS (V)
www.nellsemi.com
6N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
101
25°C
150°C
100
-55°C
10-1
2
Note:
1. VDS = 40V
2. 250µs Pulse Test
4 6 8 10
Gate-Source voltage, VGS (V)
Fig.4 Body diode forward voltage variation
vs. source current and temperature
100
150ºC
25ºC
101
Note:
1. VGS = 0V
2. 250µs Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
12
10
8
6
4
2
0
0
Page 6 of 10
VDS = 120V
VDS = 300V
VDS = 480V
Note:
1. lD = 6A
6 12 18
Total gate charge, QG (nC)
24

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