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Teilenummer | ME8107-G |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | Matsuki | |
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Gesamt 5 Seiten ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
● RDS(ON)≦7.2mΩ@VGS=-10V
● RDS(ON)≦12mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● LCD Display inverter
e Ordering Information: ME8107(Pb-free)
ME8107-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
-35
±20
-13
-10
-52
2
1.3
-55 to 150
62.5
* The device mounted on 1in2 FR4 board with 2 oz copper
1.2
Mar, 2012-Ver1.3
Unit
V
V
A
A
W
℃
℃/W
01
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ ME8107-G Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ME8107-G | P-Channel Enhancement Mode MOSFET | Matsuki |
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