|
|
Número de pieza | MTED6N25J3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTED6N25J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C894J3
Issued Date : 2013.03.11
Revised Date : 2013.12.30
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTED6N25J3 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=5A
VGS=6V, ID=3A
250V
8A
435mΩ
410mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTED6N25J3
Outline
TO-252(DPAK)
G:Gate D:Drain
S:Source
G DS
Ordering Information
Device
Package
MTED6N25J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTED6N25J3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C894J3
Issued Date : 2013.03.11
Revised Date : 2013.12.30
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
100
10
0.1
Ciss
C oss
Crss
1 10
VDS, Drain-Source Voltage(V)
100
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-65 -35
-5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
Gate Charge Characteristics
10
8
1
6
0.1
0.01
0.001
VDS=40V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
10 Limited
1
100μs
1ms
10ms
100ms
1s
0.1 TC=25°C, Tj=150°C
VGS=10V, θJC=1.6°C/W
Single Pulse
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
DC
1000
4
VDS=200V
2 ID=3A
0
0 2 4 6 8 10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
10
9
8
7
6
5
4
3
2
1 VGS=10V, RθJC=1.6°C/W
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTED6N25J3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTED6N25J3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTED6N25J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |