DataSheet.es    


PDF MTE09N06FP Data sheet ( Hoja de datos )

Número de pieza MTE09N06FP
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes Cystech Electonics 
Logotipo Cystech Electonics Logotipo



Hay una vista previa y un enlace de descarga de MTE09N06FP (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! MTE09N06FP Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C912FP
Issued Date : 2015.05.19
Revised Date : 2015.06.29
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE09N06FP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=7V, ID=20A
60V
52A
7.4mΩ
8.1mΩ
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTE09N06FP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTE09N06FP-0-UB-S
Package
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE09N06FP
CYStek Product Specification

1 page




MTE09N06FP pdf
CYStech Electronics Corp.
Spec. No. : C912FP
Issued Date : 2015.05.19
Revised Date : 2015.06.29
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1000
C oss
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
1.2
ID=1mA
1
0.8
0.6
ID=250μ A
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDSON
Limited
100
10μs
100μs
10 1ms
10ms
1 TC=25°C, Tj=175°C
VGS=10V, RθJC=2.4°C/W
Single Pulse
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
2 VDS=48V
ID=30A
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
60
50
40
30
20
10
0
25
VGS=10V, RθJC=2.4°C/W
50 75 100 125 150
TC, Case Temperature(°C)
175
MTE09N06FP
CYStek Product Specification

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet MTE09N06FP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MTE09N06FPN-Channel Enhancement Mode Power MOSFETCystech Electonics
Cystech Electonics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar