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PDF MTE05N08E3 Data sheet ( Hoja de datos )
| Número de pieza | MTE05N08E3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE05N08E3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C918E3
Issued Date : 2013.06.10
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N08E3 BVDSS
ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
80V
180A
4.3mΩ
4.5mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE05N08E3
Outline
TO-220
G：Gate
D：Drain
S：Source
Ordering Information
Device
MTE05N08E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTE05N08E3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C918E3
Issued Date : 2013.06.10
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100000
10000
Ciss
1000
C oss
Crss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
0.8
0.6
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
0.4
-60
-20 20 60 100 140
Tj, Junction Temperature(°C)
180
Gate Charge Characteristics
10
VDS=40V
8 ID=20A
6
4
2
0
0 20 40 60 80 100 120 140
Total Gate Charge---Qg(nC)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limit
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.45°C/W
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
200
180 Silicon limit
160
140
120
100
80
60 Package limit
40
VGS=10V, RθJC=0.45°C/W
20
0
0 25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE05N08E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE05N08E3.PDF ] | |
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