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Número de pieza | FDD5N50F | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD5N50F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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FDD5N50FTM_WS
N-Channel UniFETTM FRFET® MOSFET
500 V, 3.5 A, 1.55 Ω
Features
• RDS(on) = 1.25Ω (Typ.) @ VGS = 10 V, ID = 1.75 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
S
D
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FDD5N50FTM_WS Rev. C0
1
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Ratings
500
±30
3.5
2.1
14
257
3.5
4
4.5
40
0.3
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Ratings
1.4
110
Units
oC/W
www.fairchildsemi.com
1 page IG = const.
Figure 11. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 12. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FDD5N50FTM_WS Rev. C0
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDD5N50F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD5N50 | N-Channel UniFET MOSFET | Fairchild Semiconductor |
FDD5N50F | N-Channel MOSFET | Fairchild Semiconductor |
FDD5N50FTM_WS | N-Channel MOSFET | Fairchild Semiconductor |
FDD5N50NZ | MOSFET ( Transistor ) | Fairchild Semiconductor |
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