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AO3416 Schematic ( PDF Datasheet ) - Tuofeng Semiconductor

Teilenummer AO3416
Beschreibung N-Channel Enhancement Mode Field Effect Transistor
Hersteller Tuofeng Semiconductor
Logo Tuofeng Semiconductor Logo 




Gesamt 4 Seiten
AO3416 Datasheet, Funktion
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3416
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3416 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Features
VDS (V) = 20V
ID = 6.0 A
RDS(ON) < 22m(VGS = 4.5V)
RDS(ON) < 26m(VGS = 2.5V)
RDS(ON) < 34m(VGS = 1.8V)
ESD Rating: 2000V HBM
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
20
±8
6.0
30
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W





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