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Teilenummer | S9018 |
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Beschreibung | NPN Transistor | |
Hersteller | Tuofeng Semiconductor | |
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Gesamt 2 Seiten Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TO-92 Plastic-Encapsulate Transistors
S9018 TRANSISTOR (NPN)
FEATURES
z High Current Gain Bandwidth Product
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
25
18
4
50
0.4
312.5
150
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
IC=100μA,IE=0
IC=0.1mA,IB=0
IE=100μA,IC=0
VCB=20V,IE=0
VCE=15V,IB=0
VEB=3V,IC=0
VCE=5V, IC=1mA
IC=10mA,IB=1mA
IC=10mA,IB=1mA
VCE=5V,IC=50mA,f=400MHz
Min Typ Max Unit
25 V
18 V
4V
0.1 nA
0.1 μA
0.1 μA
28 270
0.5 V
1.42 V
800 MHz
CLASSIFICATION OF hFE
RANK
D
RANGE
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ S9018 Schematic.PDF ] |
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