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PDF SSS7N60 Data sheet ( Hoja de datos )
| Número de pieza | SSS7N60 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS7N60
7.0Amps ，600Volts
N-CHANNEL MOSFET
■ DESCRIPTION
The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics,
such as fast switching time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually usually used at high
speed switching applications in power supplies .PWM motor controls, high efficient
.DC to DC converters and bridge circuits
■ FEATURES
● RDS(ON)=1.2Ω@VGS =10V
● Ultra Low gate charge(tupical 29nC)
● Low reverse transfer capacitance(Crss=typical6.0pF)
● Fast switching capability
● Avalanche energy tested
● Improved dv/dt capability,high ruggedness
■ SYMBOL
■ ORDERING INF ORMATION
Order Number
Normal
Lead Free Plating
7N60-TA3-T
7N60L-TA3-T
2N60-TF3-T
2N60L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
Package
TO-220
TO-220F
Pin Assignment
12
3
GD
S
GD
S
Packing
Tube
Tube
2N60L-TA3-T
(1)T:Tube,R:Tape Reel
（1）Packing Type
（2）Package Type
（3）Lead Plating
(2)TA3:TO220,TF3:TO-220F
(3)L:Lead Free Plating Blank：Pb/Sn
■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless otherwise specified)
PARAMETER
SYMBOL
PATINGS
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current(Note 2)
Drain Currenet
Continuous
Tc=25℃
VDSS
VGSS
IAP
ID
600
±30
7.4
7.4
Drain Current Pulsed(Note 2)
Avalanche Energy
Peak Diode Recovery dv/dt(Note 4)
Repetitive(Note 2)
Single Pulse(Note 3)
IDP
EAR
EAS
dv/dt
29.6
14.2
530
4.5
UNIT
V
V
A
A
A
mJ
mJ
v/ns
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SSS7N60.PDF ] | |
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