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4622 Schematic ( PDF Datasheet ) - Tuofeng Semiconductor

Teilenummer 4622
Beschreibung 20V Dual P + N-Channel MOSFET
Hersteller Tuofeng Semiconductor
Logo Tuofeng Semiconductor Logo 




Gesamt 7 Seiten
4622 Datasheet, Funktion
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4622
20V Dual P + N-Channel MOSFET
Product Summary
N-Channel
P-Channel
VDS (V) = 20V
-20V
ID = 6.4A (VGS=4.5V) -6.4A (VGS =-4.5V)
RDS(ON)
RDS(ON)
< 23m(VGS=4.5V)
< 40m(VGS = -4.5V)
< 30m(VGS=2.5V) < 50m(VGS = -2.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
S1
G1
S2
G2
D1
D1
D2
D2
D1 D2
G1 G2
S1
n-channel
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±16
Continuous Drain
Current AF
TA=25°C
ID
6.4
Pulsed Drain Current B
IDM 35
Power Dissipation
TA=25°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
Junction and Storage Temperature Range
PD
IAR
EAR
TJ, TSTG
2
13
25
-55 to 150
Max p-channel
-20
±12
-6.4
-25
2
13
25
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
62.5
110
40
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W






4622 Datasheet, Funktion
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4622
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
-10V
20
15
10
-3.5V
-4.5V
-6V
VGS=-2.5V
20
15
VDS=-5V
10
25°C
5
0
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
5
0
0.5
125°C
-40°C
1.0 1.5 2.0 2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
3.0
80 1.6
70
VGS=-2.5V
60
50
1.4
ID=-4.5A
VGS=-2.5V
1.2
VGS=-4.5V
1 ID=-6.4A
40
VGS=-4.5V
0.8
30
0
5 10 15 20 25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
ID=-4.5A
60 125°C
40
25°C
20
0 2 4 6 8 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.6
-50
-25 0 25 50 75 100 125
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
150
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
-40°C
1.0E-06
0.0
0.2 0.4 0.6 0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0

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