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4612 Schematic ( PDF Datasheet ) - Tuofeng Semiconductor

Teilenummer 4612
Beschreibung MOSFET ( Transistor )
Hersteller Tuofeng Semiconductor
Logo Tuofeng Semiconductor Logo 




Gesamt 7 Seiten
4612 Datasheet, Funktion
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
Features
n-channel
VDS (V) = 60V
ID = 4.5A (VGS=10V)
RDS(ON)
< 55m(VGS=10V)
< 60m(VGS=4.5V)
p-channel
-60V
-3.2A (VGS = -10V)
RDS(ON)
< 80m (VGS = -10V)
< 95m (VGS = -4.5V)
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
4.5
Pulsed Drain Current B
IDM 20
Max p-channel
-60
±20
-3.2
-20
Units
V
V
A
Power Dissipation
TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
t 10s
Steady-State
Steady-State
2
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
2
-55 to 150
W
°C
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 60 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W






4612 Datasheet, Funktion
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
20 30
-10V
25 VDS=-5V
15 -4.5V
-4.0V
20
10
5
0
0
-3.5V
VGS=-3.0V
1234
-VDS (Volts)
Fig 1: On-Region Characteristics
15
10
125°C
5
25°C
0
5 1 1.5 2 2.5 3 3.5
-VGS(Volts)
Figure 2: Transfer Characteristics
4
130
120 VGS=-4.5V
110
100
90
80 VGS=-10V
70
0 2 4 6 8 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
180 ID=-3.2
160
125°C
140
120
100
80 25°C
60
2 3 4 5 6 7 8 9 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0
ID=-3.2A
VGS=-10V
VGS=-4.5V
ID=-2.8A
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
1.0E-05
25°C
1.0E-06
0.0
0.2 0.4 0.6 0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0

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