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PDF 4410 Data sheet ( Hoja de datos )
| Número de pieza | 4410 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4410 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology co., LTD
N-Channel Enhancement-Mode MOSFET (30V, 10A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
30V 10A
13.5 @ VGS = 10V ,ID=10A
20 @ VGS = 4.5V,ID=5A
4410
Features
· Advanced Trench Process Technology
· High Density Cell Design for Ultra Low On-Resistance
· Lead free product is acquired
· Surface mount Package
·
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current @TA=25oC
IDM Drain Current (Pulsed) a
PD Total Power Dissipation @TA=25oC
Tj, Tstg Operating Junction and Storage Temperature Range
RqJA Thermal Resistance Junction to Ambient
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Ratings
30
±20
10
50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 4410.PDF ] | |
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