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PDF MMBTH10LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBTH10LT1 | |
| Descripción | VHF/UHF Transistors | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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WILLAS
FM120-M+
MMBTH10LTT1HRU
1.0A SUVRFHACFE /MUOUHNTFSCTHrOaTTnKYsBiAsRtRoIErRsRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
zbeWtteerdreecvlaerresethlaetatkhaegme actuerrrieanl ot fapnrdotdhuecrtmcaolmrepsliiasntacencwei.th RoHS requirements.
• LoPwb-pFrroefielepsaucrkfaacgeemisouanvtaeidlaabplpelication in order to
• LoopRwtoimHpioSzwepebrrooldaoursdcst,shpfoiagrchpeae. cffkiciniegnccoy.de suffix ”G”
• HHigahlocguerrnenfrteceapparobdiluitcyt, lfoowr pfoarcwkainrgd cvooldtaegseudffrixop“H. ”
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
•
HOigrhdseurrgiencgapInabfiolitrym. ation
Guardring for overvoltage protection.
• Ultra higDhe-vsicpeeed switchinMga.rking
Shipping
• SiliMcoMnBeTpHi1ta0xLiTa1l planar ch3ipE,Mmetal silicon3j0u0n0c/Ttiaopne.&Reel
• Lead-free parts meet environmental standards of
MMAILX-ISMTUDM-19R5A0T0I/N2G28S
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Halogen fRreaetipnrgoduct for packing coSdyemsbufofilx "H" Value
Unit
MeCcohlleactnor–iEcmaitltedr Vaolttaage
V CEO
25
•
EpCoxoylle:cUtoLr–9B4a-Vse0 Vraotlteadgeflame
r
et
a
rVd
ant
CBO
30
•
•
CaEsem:ittMero–lBdaesdepVlaolstatigce, SOD-123HV EBO
Terminals :Plated terminals, solderable
per
3.0 ,
MIL-STD-750
Vdc
Vdc
Vdc
0.031(0.8) Typ.
SOT–203.040(1.0)
0.024(0.6)
3
C0O.0L3L1(E0C.8T) OTyRp.
THERMALMCeHthAoRdA2C02T6ERISTICS
1
• PolCahriatyra:cItnedriisctaicted by cathode band
Symbol
Max
BASE
Dimensions in inches and (millimeters)
Unit
• MoTuonttainl DgePvoicseitDioisnsi:pAantioyn FR– 5 Board, (1)
• WeTigAh=t 2: 5A°pCproximated 0.011 gram
PD 225 mW
2
EMITTER
Derate above 25°C
1.8 mW/°C
TheMrmAalXRIeMsiUstaMncRe,AJuTnIcNtiGonStoAANmDbieEntLECTRICARLθJCA HARACT5E56RISTICS°C/W
Ratings at 25T℃otalaDmebviiecentDteismsippeartaiotnure unless otherwise specified.
Single phaseAhluamlfinwaavSeu,b6s0trHatze,,r(e2s)isTtAiv=e2o5f°iCnductive load.
PD
For capacitivDeelroaatde,adbeorvaete2c5u°rCrent by 20%
300 mW
2.4 mW/°C
Thermal RReAsTisItNanGcSe, Junction to AmbienSt YMBOL FM120R-MθJAH FM130-MH FM411740-MH FM15°0C-M/WH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CodeJunction and Storage Temperature
1T2J , Tstg 13 –55 to1+4150 15 °C 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
MaximumDREMVSICVoEltaMgeARKING
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
MMBTH10LT1= 3EM
Maximum Average Forward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 Volts
IO 1.0 Amps
Peak
ELECTRICAL
Forward Surge Current
C8.3HmAsRsAingCleThEaRlf sISinTe-IwCaSve(TA
= 25°C
IFSM
unless
otherwise
noted.)
superimposed on rated load (JCEhDaErCacmteerthisotdic)
Symbol
Min
30
Typ Max
Unit
Amps
Typical ThOeFrmFalCRHesAisRtaAncCeT(NEoRteIS2)TICS
Typical Junction Capacitance (Note 1)
Operating TemCpoelleracttuorre–ERmanitgteer Breakdown Voltage
Storage Temp(IeCra=tu1re.0RmaAngdec, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 1C00HAµRAAdcCT, EI ER=IS0T)ICS
RΘJA
CJ
TJ
V (BR)-C5EO5 to +125 25
—
40
120
—
-V5d5cto +150
℃/W
PF
℃
TSTG
- 65 to +175
℃
V (BR)CBO
30
— — Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum ForEwmaridtteVro–lBtaagseeaBt r1e.0aAkdDoCwn Voltage
Maximum Ave(IraEg=e1R0eµveArdsce ,CIuCr=re0n)t at @T A=25℃
Rated DC BloCckoilnlegcVtoorltCaguetoff Current @T A=125℃
( V CB = 25Vdc , I E = 0 )
VF
IR
V (BR)EBO
0.50 3.0
I CBO
—
0—.70 —
0.5
— 10100
0.V8d5c
nAdc
0.9 0.92 Volts
mAmp
NOTES:
Collector Cutoff Current
1- Measured at(1VMCHB Z=a3n0dVadpcpl,ieIdEr=ev0er)se voltage of 4.0 VDC.
I
CBO
— — 100 uAdc
2- Thermal ReEsismtaitntecer CFruotmofJf uCnucrtiroenntto Ambient
( V EB = 2.0Vdc , I C= 0 )
I EBO
— — 100 nAdc
Emitter Cutoff Current
( V = 3.0Vdc , I = 0 )
I EBO
— — 10 uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2012-20. 6Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page  
WILLAS
FM120-M+
MMBTH10LTT1HRU
1.0A SURVFAHCFE M/UOUHNTFSCTHOrTaTnKYsBiAsRRtoIERrsRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipatiSonOoffTer-s23
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage dr.o1p2. 2(3.10)
• High surge capability.
• Guardring for overvoltage protection.
.106(2.70)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals, .s0o8ld0e(r2a.b0le4p) er
,
MIL-STD-750
Method 2026 .070(1.78)
• Polarity : Indicated by cathode band
0.031(0.8) Typ.
.008(0.20)
.003(0.08)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient te.m0p0e4ra(t0ur.e1u0n)lMesAs Xot.herwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
.020(01.250) 13 14 15 16
.0VRRM
VRMS
12
(
021.0430
)
30
21
40
28
50
35
60
42
18 10
115 120
80 100 150 200 Volts
56 70 105 140 Volts
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
Dim eIOnsions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
00..09357CJ
TJ
-55 to +125
0.037
0.95
1.0
30
40
120
-55 to +150
Amps
Amps
℃/W
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-M0.H07F9M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 2.0
0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@T
@T
A=25℃
A=125℃
0.035
IR
0.9
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBTH10LT1.PDF ] | |
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