(PDF) S9015LT1 Datasheet - PNP Transistor

Número de pieza	S9015LT1
Descripción	PNP Transistor
Fabricantes	Tuofeng Semiconductor
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No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.1 Collector-base voltage A V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 2. 4 1. 3 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -45 Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 Collector cut-off current ICBO VCB=-50V, IE=0 Emitter cut-off current IEBO VEB= -5V, IC=0 DC current gain hFE(1) VCE=-5V, IC= -1mA 200 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA MAX UNIT V V V -0.1 µA -0.1 µA 1000 -0.3 V -1 V Transition frequency VCE=-5V, IC= -10mA fT f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range L 200-400 H 400-600 DEVICE MARKING S9015LT1=M6 1 page

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PDF S9015LT1 Data sheet ( Hoja de datos )