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PDF IXA27IF1200HJ Data sheet ( Hoja de datos )
| Número de pieza | IXA27IF1200HJ | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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XPT IGBT
Copack
Part number
IXA27IF1200HJ
IXA27IF1200HJ
VCES
I C25
VCE(sat)
=
=
=
1200 V
43 A
1.8 V
(G) 1
2 (C)
3 (E)
Backside: isolated
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: ISOPLUS247
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623b
1 page  
IXA27IF1200HJ
IGBT
50
VGE = 15 V
40
IC 30
[A]
20
TVJ = 25°C
TVJ = 125°C
10
50
VGE = 15 V
17 V
19 V
40
TVJ = 125°C
IC 30
[A] 20
10
13 V
11 V
9V
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
50
40
IC 30
[A]
20
10 TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
6
5
4
E
3
[mJ]
RG = 39
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
2
Eon
Eoff
1
0
0 10 20 30 40 50
IC [A]
Fig. 5 Typ. switching energy vs. collector current
0
0
Fig. 2
1234
VCE [V]
Typ. output characteristics
20
IC = 25 A
VCE = 600 V
15
5
VGE 10
[V]
5
0
0 20 40 60 80
QG [nC]
Fig. 4 Typ. turn-on gate charge
100
4
IC = 25 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
3
E
[mJ]
2
Eon
Eoff
1
40 60 80 100 120 140
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXA27IF1200HJ.PDF ] | |
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