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PDF IXA20IF1200HB Data sheet ( Hoja de datos )

Número de pieza IXA20IF1200HB
Descripción XPT IGBT
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! IXA20IF1200HB Hoja de datos, Descripción, Manual

XPT IGBT
Copack
Part number
IXA20IF1200HB
IXA20IF1200HB
VCES
I C25
VCE(sat)
=
=
=
1200 V
38 A
1.8 V
(G) 1
2 (C)
3 (E)
Backside: collector
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100102a

1 page




IXA20IF1200HB pdf
IXA20IF1200HB
IGBT
30
VGE = 15 V
25
20
IC 15
[A]
10
TVJ = 25°C
TVJ = 125°C
5
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
30
25
20
IC
15
[A]
10
5 TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
4
RG = 56
VCE = 600 V
3
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
E
2
[mJ]
1
30
VGE = 15 V
25
17 V
19 V
20
IC 15
TVJ = 125°C
[A]
10
13 V
11 V
9V
5
0
01234
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 15 A
VCE = 600 V
15
5
VGE 10
[V]
5
0
0 10 20 30 40 50
QG [nC]
Fig. 4 Typ. turn-on gate charge
2.8
IC = 15 A
VCE = 600 V
2.4
VGE = ±15 V
TVJ = 125°C
60
E
2.0
[mJ]
1.6
Eoff
Eon
0
0 5 10 15 20 25 30 35
IC [A]
Fig. 5 Typ. switching energy vs. collector current
1.2
40 60 80 100 120 140 160
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100102a

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