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IX2204 Schematic ( PDF Datasheet ) - IXYS

Teilenummer IX2204
Beschreibung Dual Low Side IGBT Gate Driver
Hersteller IXYS
Logo IXYS Logo 




Gesamt 10 Seiten
IX2204 Datasheet, Funktion
INTEGRATED CIRCUITS DIVISION
Features
High Output Current: 2A Source/4A Sink
Wide Operating Voltage Range: -10V to +26V
Negative Gate Drive Capability
Desaturation Detection Circuit
Separate Source and Sink Outputs
Programmable Blanking and Output Tristate
TTL Compatible Inputs
-40°C to +125°C Extended Operating Temperature
Range
Under-Voltage Lockout Circuitry
Fault Status Output
Applications
Efficient IGBT Switching
Motor Controls
Switch Mode Power Supplies
IX2204 Functional Block Diagram
IX2204
Dual Low Side
IGBT Gate Driver
Description
The IX2204 is a dual high current gate driver
specifically designed to drive the gates of high current
IGBTs. The IX2204 provides two high current outputs
capable of sourcing 2A and sinking 4A. The outputs
can be paralleled for IGBT gates that require higher
drive current. The outputs have a wide operating
voltage range, and are able to provide a negative gate
drive voltage to ensure the turn-off of high power
IGBTs. A desaturation detection circuit protects the
power IGBT during a short circuit. The IX2204 has a
programmable two-level turn-off feature that protects
the device against excessive voltages when the IGBT
is being turned off due to an over-current situation.
The IX2204 has under voltage lockout circuitry and a
fault status output, and is available in a 16-lead
thermally enhanced SOIC package.
Ordering Information
Part Description
IX2204NE 16-Pin SOIC in Tubes (50/Tube)
IX2204NETR 16-Pin SOIC in Tape & Reel (2000/Reel)
UVLO
VHA
INA
INB
MODE
BLANK
TRISTATE
DESAT
FAULT
1.4V
Control
Logic
A Channel
Level Shift
B Channel
Level Shift
OUTHA
OUTLA
VLA
VHB
OUTHB
OUTLB
GND VLB
DS-IX2204-R03
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1






IX2204 Datasheet, Funktion
INTEGRATED CIRCUITS DIVISION
IX2204
2 Performance Characteristics
Propagation Delay
vs. Temperature
100
80
TDHL
60
TDLH
40
20
0
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
25
20
15
10
5
0
-5
-10
-15
-20
-25
-50
Pulse Width Distortion
vs. Temperature
-25 0 25 50 75 100 125
Temperature (ºC)
150
VDESAT Threshold
vs. Temperature
1.50
1.45
1.40
1.35
1.30
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
TRISTATE and BLANK Source Current
vs. Temperature
-120
-130
-140
-150
-160
-170
-180
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Power Supply Current
vs. Temperature
3.0
2.5
2.0
1.5
1.0
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
UVLO+ Threshold
vs. Temperature
13.0
12.5
12.0
11.5
11.0
10.5
10.0
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Output Resistance
vs. Temperature
(IOUTH=-100mA, IOUTL=100mA)
5
4
ROUTH
3
2
ROUTL
1
0
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Output Resistance
vs. Temperature
(IOUTH=-2A, IOUTL=4A)
8
7 ROUTH
6
5
4
ROUTL
3
2
1
0
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Peak Output Current
vs. Temperature
(10μs Pulse)
8
7
IOUTL
6
5
4
IOUTH
3
2
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
6
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R03

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