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PDF MMBR951L Data sheet ( Hoja de datos )
| Número de pieza | MMBR951L | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR951L
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in high gain , low noise small-signal
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 V
100 mA
0.322
W
150 ℃
-55~150
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR951L
S-PARAMETER
VCE = 6 V, IC = 30 mA
f (MHz)
︱S11︱
100 0.40
500 0.30
1000
0.29
2000
0.24
3000
0.30
∠S11
–94
–162
170
134
101
︱S21︱
33
8.4
4.3
2.3
1.6
∠S21
125
90
76
56
41
︱S12︱
0.03
0.07
0.12
0.23
0.35
∠S12
87
84
80
71
66
︱S22︱
0.58
0.31
0.27
0.33
0.30
∠S22
–42
–35
–39
–48
–60
VCE = 6 V, IC = 60 mA
f (MHz)
︱S11︱
100 0.38
500 0.37
1000
0.36
2000
0.33
3000
0.38
∠S11
–126
–176
163
130
98
︱S21︱
31
7.3
3.7
2.0
1.4
∠S21
116
77.6
73.4
52
37
︱S12︱
0.03
0.05
0.12
0.22
0.34
∠S12
74
84
84
78
69
︱S22︱
0.49
0.34
0.34
0.37
0.34
∠S22
–37
–26
–37
–48
–62
VCE = 8 V, IC = 5 mA
f (MHz)
︱S11︱
100 0.83
500 0.51
1000
0.38
2000
0.31
3000
0.35
∠S11
–35
–117
–160
151
110
︱S21︱
13.9
6.7
3.6
1.9
1.4
∠S21
154
104
82
58
41
︱S12︱
0.04
0.08
0.10
0.20
0.32
∠S12
92
51
72
73
71
︱S22︱
0.90
0.55
0.44
0.46
0.43
∠S22
–19
–38
–42
–47
–63
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBR951L.PDF ] | |
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