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PDF MMBR571L Data sheet ( Hoja de datos )
| Número de pieza | MMBR571L | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR571L
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
fT = 8.0 GHz TYP. @ IC= 50 mA
·High Gain
GNF = 16.5 dB TYP. @ IC= 10mA, f = 0.5 GHz
APPLICATIONS
·Designed for low noise , wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
3V
80 mA
0.33 W
150 ℃
-55~150
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR571L
S-PARAMETER
VCE = 5 V, IC = 30 mA
f (MHz)
︱S11︱
200 0.42
500 0.41
1000
0.42
1500
0.44
2000
0.44
∠S11
–148–
–177–
165
151
135
︱S21︱
14.79
6.31
3.35
2.29
1.84
∠S21
102
84
71
59
48
︱S12︱
0.04
0.09
0.16
0.23
0.30
∠S12
68
72
70
65
60
︱S22︱
0.26
0.14
0.12
0.11
0.10
∠S22
–87
–115
–135
–144
–157
VCE = 5 V, IC = 50 mA
f (MHz)
︱S11︱
200 0.41
500 0.42
1000
0.43
1500
0.44
2000
0.45
∠S11
–159–
179
163
148
134
︱S21︱
15.14
6.38
3.35
2.32
1.84
∠S21
98
83
70
58
48
︱S12︱
0.04
0.09
0.16
0.23
0.30
∠S12
73
75
71
66
60
︱S22︱
0.21
0.13
0.12
0.10
0.09
∠S22
–96
–124
–143
–151
–163
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBR571L.PDF ] | |
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