DataSheet.es    


PDF IRFWZ24A Data sheet ( Hoja de datos )

Número de pieza IRFWZ24A
Descripción Power MOSFET ( Transistor )
Fabricantes Samsung 
Logotipo Samsung Logotipo



Hay una vista previa y un enlace de descarga de IRFWZ24A (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! IRFWZ24A Hoja de datos, Descripción, Manual

Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175¡ ÉOperating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
Lower RDS(ON) : 0.050 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 60 V
RDS(on) = 0.07
ID = 17 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
60
17
12
68
+_ 20
149
17
4.4
5.5
3.8
44
0.29
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
R θ JC
R θ JA
R θ JA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.43
40
62.5
Units
oC /W

1 page




IRFWZ24A pdf
N-CHANNEL
POWER MOSFET
IRFW/IZ24A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet IRFWZ24A.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFWZ24Power MOSFET ( Transistor )Fairchild Semiconductor
Fairchild Semiconductor
IRFWZ24APower MOSFET ( Transistor )Samsung
Samsung

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar