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PDF IS31SE5104 Data sheet ( Hoja de datos )
| Número de pieza | IS31SE5104 | |
| Descripción | 4-CH CAPACITIVE TOUCH SENSOR | |
| Fabricantes | ISSI | |
| Logotipo |  |
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IS31SE5104
4-CH CAPACITIVE TOUCH SENSOR WITH AUTO CALIBRATION
December 2013
GENERAL DESCRIPTION
The IS31SE5104 is an ultra low power, fully integrated
4-channel solution for capacitive touch-buttons
applications. The chip allows electrodes to project
sense fields through any dielectric such as glass or
plastic. On-chip calibration logic continuously monitors
the environment and automatically adjusts on-and-off
threshold levels to prevent false sensor activation.
The IS31SE5104 supports the 400kHz I²C serial bus
data protocol and includes a field programmable slave
address. An INTB is generated when a button event
(touched or released) occurs, triggered and cleared
condition could be configured by setting the interrupt
register.
IS31SE5104 is available in QFN-16 (3mm × 3mm) and
SOP-16 packages. It operates from 2.7V to 5.5V over
the temperature range of -40°C to +85°C.
FEATURES
Complete eight sensors capacitive touch
controller for buttons
Auto offset compensation
Sensitivity adjustable by external capacitor or
internal register
Extremely low power optimized for portable
application
Interrupt output
400kHz fast-mode I²C interface
8kV ESD HBM
Operating temperature TA = −40°C ~ +85°C
QFN-16 (3mm × 3mm) and SOP-16 packages
APPLICATIONS
Mobile phones
GPS
PDAs
TYPICAL APPLICATION CIRCUIT
Figure 1 Typical Application Circuit
Note 1: The IC should be placed far away from the mobile antenna in order to prevent the EMI.
Note 2: The RS resistor should place as close as possible to reduce EMI.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. A, 12/25/2013
1
1 page  
IS31SE5104
ABSOLUTE MAXIMUM RATINGS
Supply voltage, VCC
Voltage at any input pin
Maximum junction temperature, TJMAX
Storage temperature range, TSTG
Operating temperature range, TA
ESD (HBM)
ESD (CDM)
-0.3V ~ +6.0V
-0.3V ~ VCC+0.3V
150°C
-65°C ~ +150°C
−40°C ~ +85°C
8kV
1kV
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = -40°C ~ +85°C, VCC = 2.7V ~ 5.5V, unless otherwise noted. Typical value are TA = 25°C, VCC = 3.6V.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
VCC Supply voltage
ICC Quiescent power supply current VSDB = VCC = 3.6V
ISD Shutdown current
VSDB = 0V, VCC = 5.5V
VHR Current Sink headroom voltage
IOUT = 20mA, VCC = 3.6V
∆CS Minimum detectable capacitance CS = 5pF (Note 1)
2.7 5.5
173 476
1.6 5.8
79 290 467
0.2
V
μA
μA
mV
pF
Logic Electrical Characteristics
VIL Logic “0” input voltage
VIH Logic “1” input voltage
IIL Logic “0” input current
IIH Logic “1” input current
VCC = 2.7V
VCC = 5.5V
VINPUT = 0V(Note 1)
VINPUT = VCC(Note 1)
0.4 V
1.4 V
5 nA
5 nA
DIGITAL INPUT SWITCHING CHARACTERISTICS (Note 1)
Symbol
Parameter
Condition Min.
Typ.
fSCL Serial-Clock frequency
tBUF
Bus free time between a STOP and a
START condition
1.3
tHD, STA
tSU, STA
tSU, STO
tHD, DAT
tSU, DAT
tLOW
tHIGH
tR
Hold time (repeated) START condition
Repeated START condition setup time
STOP condition setup time
Data hold time
Data setup time
SCL clock low period
SCL clock high period
Rise time of both SDA and SCL signals,
receiving
(Note 2)
0.6
0.6
0.6
100
1.3
0.7
20+0.1Cb
tF
Fall time of both SDA and SCL signals,
receiving
(Note 2)
20+0.1Cb
Note 1: Guaranteed by design.
Note 2: Cb = total capacitance of one bus line in pF. ISINK ≤ 6mA. tR and tF measured between 0.3 × VCC and 0.7 × VCC.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. A, 12/25/2013
Max.
400
0.9
300
300
Unit
kHz
μs
μs
μs
μs
μs
ns
μs
μs
ns
ns
5
5 Page 
IS31SE5104
CLASSIFICATION REFLOW PROFILES
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate (Tsmax to Tp)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body temperature (Tp)*
Time (tp)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax)
Time 25°C to peak temperature
Pb-Free Assembly
150°C
200°C
60-120 seconds
3°C/second max.
217°C
60-150 seconds
Max 260°C
Max 30 seconds
6°C/second max.
8 minutes max.
Figure 6 Classification profile
Integrated Silicon Solution, Inc. – www.issi.com
Rev. A, 12/25/2013
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IS31SE5104.PDF ] | |
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