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PDF 1SS406 Data sheet ( Hoja de datos )

Número de pieza 1SS406
Descripción Silicon Epitaxial Schottky Barrier Type Diode
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! 1SS406 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS406
High Speed Switching Application
1SS406
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
: VF (3) = 0.50V (typ.)
: IR= 0.5μA (max)
: CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P*
50 mA
1A
200 mW
USC
Junction temperature
Tj 125 °C
Storage temperature range
Tstg 55 to 125 °C JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
1-1E1A
Weight: 0.004g(Typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 50mA
VR = 20V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.33
0.38
V
0.50 0.55
― ― 0.5 μA
3.9 pF
Equivalent Circuit (Top View)
Marking
1
A7
Start of commercial production
2001-11
2014-03-01

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