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PDF IRFP250 Data sheet ( Hoja de datos )
| Número de pieza | IRFP250 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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1. IRFP250 transistor pinout  Hay una vista previa y un enlace de descarga de IRFP250 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
January 2002
IRFP250
33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9295.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP250
TO-247
IRFP250
NOTE: When ordering, use the entire part number.
Features
• 33A, 200V
• rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
1 page  
IRFP250
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
7500
6000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
4500
CISS
3000
1500
0
1
COSS
CRSS
2
5 10
2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VDS ≥≥ 50V
15
10
5
TJ = 25oC
TJ = 150oC
103 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
102
TJ = 150oC
10
TJ = 25oC
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
1
0 0.5 1.0 1.5 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 30A
16
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
0
0 25 50 75 100 125
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP250.PDF ] | |
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