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Teilenummer | IRF123 |
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Beschreibung | N-Channel MOSFET Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF123
DESCRIPTION
·Drain Current ID=7A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.4Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Motor controls,Inverters and Choppers
·Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
60
±20
V
V
Drain Current-continuous@ TC=25℃ 7 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
30
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ IRF123 Schematic.PDF ] |
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