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PDF CM350DU-5F Data sheet ( Hoja de datos )

Número de pieza CM350DU-5F
Descripción Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Fabricantes Powerex Power Semiconductors 
Logotipo Powerex Power Semiconductors Logotipo



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No Preview Available ! CM350DU-5F Hoja de datos, Descripción, Manual

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM350DU-5F
Trench Gate Design
Dual IGBTMOD™
350 Amperes/250 Volts
TC Measured
Point
A
B
E
K 4 - Mounting
Holes
D
C
F
CM
H
J
H
3 - M6 NUTS
RRG
MPMPM
L
0.110 - 0.5 Tab
N
Q
C2E1
E2
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.33
3.66±0.01
3.15
2.44±0.01
0.55
0.86
0.94
0.24
Millimeters
110.0
93.0±0.25
80.0
62.0±0.25
14.0
21.75
24.0
6.0
G2
E2
C1
E1
G1
Dimensions Inches
J 0.59
K 0.26 Dia.
L 1.14 +0.04/-0.02
M 0.71
N 0.33
P 0.28
Q 0.83
R 0.98
Millimeters
15.0
6.5 Dia.
29 +1.0/-0.5
18.0
8.5
7.0
21.0
25.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
(15-20kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
DC Motor Control
Boost Regulator
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (VCES), 350 Ampere Trench
Gate Design Dual IGBTMOD™
Power Module.
Current Rating
VCES
Type Amperes Volts (x 50)
CM 350
5
361

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