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BT131-600D Schematic ( PDF Datasheet ) - Inchange Semiconductor

Teilenummer BT131-600D
Beschreibung Triacs
Hersteller Inchange Semiconductor
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BT131-600D Datasheet, Funktion
INCHANGE Semiconductor
isc Triacs
isc Product Specification
BT131-600D
FEATURES
·With TO-92 package
·Glass passivated,sensitive gate triacs in a plastic envelope
·Intended for use in general purpose bidirectional switching and
phase control applications.
·These devices are intended to be interfaced directly to
microcontrollers,logic intergrated circuits and other low power
gate trigger circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MIN
VDRM
VRRM
IT(RMS)
ITSM
PGM
PG(AV)
Tj
Tstg
Repetitive peak off-state voltage
600
Repetitive peak off-state voltage
RMS on-state current (full sine wave)
Tlead51
Non-repetitive peak on-state current
600
1
16
Peak gate power dissipation
5
Average gate power dissipation
0.5
Operating junction temperature
110
Storage temperature
-45~150
UNIT
V
V
A
A
W
W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
VDRM
VRRM
ID
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Off-state leakage current
ID=0.1mA
ID=0.5mA
VD= VDRM(max), Tj= 125
IGT Gate trigger current
VD=12V; IT= 0.1A
VTM On-state voltage
IH Holding current
VGT Gate trigger voltage
IT=1.6A
IGT=0.1A ,VD= 12V
VD=12V ; RL=100Ωall quadrant
MIN MAX UNIT
600 V
600 V
0.5 mA
5
5
mA
5
10
1.6 V
5 mA
1.5 V
isc websitewww.iscsemi.cn





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