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PDF 1SV324 Data sheet ( Hoja de datos )

Número de pieza 1SV324
Descripción Silicon Epitaxial Planar Type Diode
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 1SV324 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Planar Type
1SV324
1SV324
TCXO/VCO
High capacitance ratio: C1V / C4V = 4.3 (typ.)
Low series resistance: rs = 0.4 (typ.)
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 125 °C
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V / C4V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯
V
⎯ ⎯ 3 nA
44 49.5 pF
9.2 12 pF
4 4.3 ⎯ ⎯
0.4 0.8 Ω
Start of commercial production
1999-02
1 2014-03-01

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