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MTB17A03V8 Schematic ( PDF Datasheet ) - Cystech Electonics

Teilenummer MTB17A03V8
Beschreibung Dual N-Channel Logic Level Enhancement Mode MOSFET
Hersteller Cystech Electonics
Logo Cystech Electonics Logo 




Gesamt 9 Seiten
MTB17A03V8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode MOSFET
MTB17A03V8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=6A
VGS=4.5V, ID=4A
30V
7A
16mΩ
25mΩ
Description
The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB17A03V8
Outline
DFN3×3
GGate DDrain SSource
Pin 1
Ordering Information
Device
MTB17A03V8-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB17A03V8
CYStek Product Specification






MTB17A03V8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
30
VDS=10V
25
20
15
10
5
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40 TJ(MAX)=150°C
TA=25°C
θJA=84°C/W
30
20
10
0
0 1 23 4 5
VGS, Gate-Source Voltage(V)
0
0.001
0.01
1
D=0.5
Transient Thermal Response Curves
0.1 1 10
Pulse Width(s)
100 1000
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=84°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB17A03V8
CYStek Product Specification

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