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Teilenummer | CM100DU-12H |
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Beschreibung | HIGH POWER SWITCHING USE INSULATED TYPE | |
Hersteller | Mitsubishi Electric Semiconductor | |
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Gesamt 4 Seiten MITSUBISHI IGBT MODULES
CM100DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
E
A
B
FG
H
D
C
C2E1 E2
C1
J
2 - Mounting
Holes
K (6.5 Dia.)
V
3-M5 Nuts
O
P
MN
L
O
QP
TAB#110 t=0.5
S
RT
U
C2E1
E2
E2
G2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
A 3.7
B 3.15±0.01
C 1.89
D 0.94
E 0.28
F 0.67
G 0.91
H 0.91
J 0.43
K 0.71
L 0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
18.0
4.0
Dimensions Inches
Millimeters
M 0.47
12.0
N 0.53 13.5
O 0.1
2.5
P 0.63 16.0
Q 0.98
25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3
7.5
T 0.83 21.2
U 0.16
4.0
V 0.51 13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-12H is a
600V (VCES), 100 Ampere Dual
IGBT Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
12
Sep.1998
21
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CM100DU-12H Schematic.PDF ] |
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