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PDF P75N06 Data sheet ( Hoja de datos )
| Número de pieza | P75N06 | |
| Descripción | PJP75N06 | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=13mΩ
• RDS(ON), VGS@4.5V,IDS@30A=18mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-220 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : P75N06
Drain
Gate
Source
PIN Assignment
1. Gate
2. Drain
3. Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
Avalanche Energy with Single Pulse
ID=40A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
TA= 2 5 OC
TA= 7 5 OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
V DS
V GS
ID
ID M
PD
TJ,TSTG
E AS
RθJC
RθJA
Limit
60
+20
75
350
105
62.5
-55 to + 150
400
1.2
62
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P75N06.PDF ] | |
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