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Teilenummer | D209L |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
isc Product Specification
D209L
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base voltage
9V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
12 A
100 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D209L Schematic.PDF ] |
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