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PDF NP119N04NUK Data sheet ( Hoja de datos )
| Número de pieza | NP119N04NUK | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Data Sheet
NP119N04NUK
40 V – 120 A – N-channel Power MOS FET
Application: Automotive
R07DS1252EJ0100
Rev.1.00
Mar 30, 2015
Description
The NP119N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Super low on-state resistance
RDS(on) = 2.15 mΩ MAX. (VGS = 10 V, ID = 60 A)
• Low Ciss: Ciss = 7400 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP119N04NUK-S18-AY *1 Pure Sn (Tin)
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2 RG = 25 Ω, VGS = 20 V → 0 V
Ratings
40
±20
±120
±480
250
1.8
175
–55 to +175
56
313
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60 °C/W
83.3 °C/W
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 1 of 6
1 page  
NP119N04NUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
VGS = 10 V
ID = 60 A
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
td(off)
td(on)
tf
tr
1 10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
100 1000
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
VGS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
Crss
100
0.01
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30 VDD = 32 V
20 V
25 8 V
20
12
10
8
15 6
10
VGS
4
5 VDS
2
ID = 120 A
00
0 20 40 60 80 100 120 140
QG- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100 1000
IF - Drain Current - A
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP119N04NUK.PDF ] | |
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